Abstract
Synchrotron radiation photoemission in combination with optical second-harmonic generation has been used to study thin Ag films grown at 170 K on Si(111)7 × 7. Spectra recorded before and after room temperature annealing are compared. Core level spectra show that a compact film is formed at low temperature. Room temperature annealing transforms the film into large atomically flat domains. Such films show oscillations in the otherwise structureless sp-part of the Ag valence band spectrum due to quantization perpendicular the surface. The variation of peak positions with film thickness is well described in terms of a phase accumulation model. Oscillating second-harmonic generation signals with film thickness due to resonant excitation of quantum well states are demonstrated for various combinations of incident and output polarizations.
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