Abstract
In this paper we present an experimental study of the growth morphology and of the electronic properties of Sn growth on polar InSb (111) A- and B-type surfaces, and on the InSb (100)-c(2 × 8) surface, the valence band and In-4d core level evolution as a function of Sn coverage have been measured by high-resolution ultra-violet (UV) photoemission spectroscopy, while the surface symmetry has been monitored by low-energy electron-diffraction. Clear (2 × 1)-reconstruction has been singled out on the (100) surface, while a (1 × 1)-Sn(111) layer has been obtained on the (111)-oriented substrates, and In interdiffusion has been observed into the Sn matrix.
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