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Abstract
Occupied and unoccupied electron states of amorphous silicon dioxide film supported on Si crystal are studied by using X-ray photoemission and, for the first time, X-ray inverse photoemission (X-ray bremsstrahlung isochromat method). A special care was undertaken to minimize decomposition of silicon oxide during X-ray bremsstrahlung measurements. The experimental spectra are compared with theoretical band structure calculations for amorphous SiO2 from the literature and good overall agreement is found. PACS numbers: 71.25.Tn, 79.20.Kz, 79.60.Ht
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