Abstract
The density of occupied states in the band gap and the position of the Fermi level of a-Si:H films of different doping levels have been measured. Undoped samples reveal a disordered surface layer with surface defects at 0.6 eV above the valence band maximum and with a density between 3−15×10 12 cm −2. The work function is 4.3 eV and nearly independent of doping. Oxidation reduces the defect density, etching by HF creates 6×10 12 cm −2 defects.
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