Abstract
Large single crystals of ReS 2 and ReSe 2 were grown by chemical vapor transport and several of their properties were investigated. Both were found to be n-type semiconductors with resistivities in the range of 1–10 ohm-cm. Photoelectrochemical measurements in aqueous solutions ofI − 3/I −resulted in high photocurrent densities, with ReSe 2 being the more efficient photoelectrode. Analysis of their optical absorption spectra resulted in lowest-energy indirect optical band gaps of 1.32(5) eV for ReS 2 and 1.17(5) eV for ReSe 2. Photoelectrochemical spectral response measurements resulted in a measured lowest-energy indirect optical band gap of 1.4 eV for ReS 2, which is in close agreement with that measured from optical absorption.
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