Abstract
The photoelectronic properties of CdS successively implanted with 1.0-, 0.5-, and 0.3-MeV P+ ions versus annealing cycles were studied. Diodes thus formed were highly photosensitive, with photoconductive gains between 102 and 104. Yellow electroluminescence was observed at 77°K. Short annealing creates centers with a sheet resistance thermal activation energy of 0.13 eV. Prolonged annealing creates states 0.75–0.8 eV below the band edge.
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