Abstract
The temperature dependent photoconductive and surface barrier photovoltaic spectral responses of InAs 0.07Sb 0.93 films with an impurity density ∼5.5×10 15 cm -3, grown by liquid phase microzone crystallization, are shown to be a function of their fundamental energy bandgaps shifted to values lower than those of InSb. From charge carrier transport measurements their absolute zero bandgap is calculated as ε g0=0.197 eV, in good agreement with theory. In contrast with previously reported data on InAs xSb 1-x solid solution bulk and single crystal layers, the electron mobility of InAs 0.07Sb 0.93 films increases with decreasing temperature reaching a value of ∼1.32×10 5 cm 2/Vs at 77 K.
Published Version
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