Abstract
Basic advantages and limitations of ultrafast photoelectronic imaging are overviewed. Presented are recent experimental results on recording of Ti: sapphire laser radiation with 200-fs time resolution and 30-line pairs/mm spatial resolution. Some peculiarities in displaying of utlrafast optical events onto the photocathode with femtosecond precision are shortly mentioned. Special emphasis is given to creation of ultra high (10-100 kV/mm) electrical field strength nearby the photocathode surface, as well as to manufacturing various types of femtosecond image converter tubes. To break the femtosecond barrier, a new technique for generation the attosecond bunches of tens keV electrons in quasistationary electromagnetic fields is proposed.
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