Photoelectron yield spectroscopy of electronic states at ultrathin [formula omitted] interfaces

Abstract

Total photoelectron yield spectroscopy (PYS) has been applied to evaluate the energy distribution of electronic defect states for ultrathin SiO 2(≤4.5nm) Si(100) system. The novelty and usefulness of this technique have been demonstrated through the observation of the reduction in defect states with progressive dilute-HF treatment for such ultrathin SiO 2 Si(100) and the comparison of the PYS and the quasi-static C-V measurements for 4.5nm-thick SiO 2 Si(100) .