Abstract
The transport of low-energy (<3 eV) photoelectrons in CsI and CsBr films was investigated by direct photoionization in the film and by photoinjection of electrons from underlying K–Cs–Sb, Cs3Sb, and CsI photocathodes. Photoelectron energy distributions and the photoyield dependence on film thickness were studied, assisted by in situ x-ray photoelectron spectroscopy surface characterizations. A model describing electron transport through the coating film was used, which correlated well with experimental results from the various material combinations, coating thickness, and photon energies. The model provides valuable information on the interface potential barrier of theses systems, as well as quantum-yield attenuation length and photoelectron energy distributions.
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