Photoelectron spectroscopy of individual nanowires of Si and Ge

Abstract

We describe an experiment designed to carry out photoelectron spectroscopy on individual nanowires of Si and Ge. Laser generated, 150fs pulses of 200nm light (6.2eV) were focused onto a single Si or Ge nanowire; the ensuing photoemitted electrons were measured with 20meV resolution. Fermi level locations within the individual Si and Ge nanowire band gaps and work functions of hydrogen terminated nanowires were measured. Polarization dependent electron emission was observed and compared with Mie theory.