Photoelectron holography of Si(100)-[2×1] and other surface and thin-film structures

Abstract

Direct imaging of near-neighbor atomic structure in Si(100) is demonstrated using photoelectron holography with the Si 2s core level. Photoelectron diffraction studies of the initial stages of epitaxy of copper on Si(100)-[2×1] surfaces show that room-temperature deposition does not result in ordered films. Examples of quantitative photoelectron diffraction studies of epitaxial copper films show that bond-length accuracies of 0.05 Å are possible by fitting techniques.