Abstract
AbstractThe severe recombination of carriers and poor stability against moisture environment have limited the application of CsPbX3 (X = Cl, Br, I) nanocrystals in photodetection. Herein, a large‐scale synthesis of SnO2‐coated CsPbBr3 NCs (abbreviated to CsPbBr3@SnO2 NCs) has been reported for the first time by combining the water‐triggered transformation of Cs4PbBr6 NCs and the hydrolysis of tin 2‐ethylhexanoate. Owing to the construction of the CsPbBr3/SnO2 heterojunction, the recombination rate of carriers in the CsPbBr3@SnO2 NCs is greatly reduced compared to that of the pristine CsPbBr3 NCs. The stability against water degradation is also improved due to the protection of the SnO2 coating. Accordingly, a CsPbBr3@SnO2‐graphene hybrid device for high‐performance photodetection is demonstrated. Results show that the responsivity of the device reaches 6.2 104 A W−1 at 1 V, which is over 496‐fold of the pristine CsPbBr3 device. This work not only provides a robust approach for the surface modification of CsPbX3 NCs but also offers useful guidance on the optoelectronic applications with CsPbX3 NCs.
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