Photoelectron characteristics of diode structures based on quantum-well GaAs/InGaAs heteronanostructures with a Mn δ-doped layer

Abstract

A GaAs layer over Mn is found to acquire p-type conductivity in Au(Ni)/n-GaAs/InGaAs diode heteronanostructures due to laser δ-doping of Mn with a density of 0.15–1.5 monolayers, yielding the formation of a p-n junction in the Schottky barrier. The effect of the shunting of diode structures by the ohmic resistance of the Mn δ-doped layer and a p-n junction outside the Schottky electrode is revealed. This effect is found to disappear after the formation of mesadiodes. The current-voltage characteristics of the mesadiodes with Mn cannot be described by the mechanism of thermionic emission through the barrier, and the current in these mesadiodes flows with the participation of thermal-field and field emission. A compensated region in the n-GaAs buffer layer, adjacent to the δ-doped layer, formed due to the laser deposition of a coating layer is found. The length of this region decreases with reduction in the layer-production temperature. A substantial increase in the effective surface potential barrier in the semiconductor (up to 1.05 V) in structures with Mn was revealed, and the photoelectric activity and depth of Mn layer occurrence in the forbidden band of GaAs energies is revealed.