Abstract
Reduction of chemical species with redox potentials above the apparent conduction band edge of p-Si were found to be possible with illuminated p-Si in contact with nonaqueous electrolytes. Analysis of the wavelength dependence of the photoreduction current and capacitance data as a function of electrode potential, ac signal frequency, and light intensity shows that this supra-conduction-band-edge reduction is the result of band-edge unpinning, rather than the result of a hot-electron injection process. The band-edge unpinning is caused by the formation of an inversion layer in illuminated p-Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
