Abstract
CdS1-xSex thin films were deposited by Chemical Solution onto ITO/glass substrates at 90 °C. Structural, optical and photoelectrochemical properties of the ternary solid solution films were evaluated in this work. The results revealed good crystalline quality of the CBD films as an effect of ITO substrate and deposition temperature. Additionally, the dense, flat and homogeneous morphology of the films transformed into clusters of plate-like structures as selenium content increased. Polycrystalline thin films with crystallite size varying from 17 to 6 nm as a function of x were obtained. Hexagonal nanocrystallites of CdS1-xSex films were revealed by TEM images. Band gap variation as a function of x was described by a polynomial equation with an optical bowing coefficient of 0.331. High energy emission of the radiative recombination process was observed from all films even without thermal treatment. The photoelectrochemical results indicated the n-type semiconductor nature of the films; flat band potential, carrier density and photocurrent decrease as Se is incorporated into the CdS lattice.
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