Abstract
n‐ and p‐type doped crystals grown by chemical vapor transport have been investigated for their electrical and photoelectrochemical properties. The photocurrent‐voltage characteristics, differential capacitance, and spectral response were measured in . The current‐voltage curves of both types of electrodes indicate significant recombination. p‐type is stable during the photocathodic hydrogen evolution while n‐type electrodes undergo photoanodic decomposition. The measured quantum efficiencies are very low due to the localized d‐electronic states involved in the photoelectronic processes. Indirect bandgap analysis of the quantum efficiency data reveals transitions at 1.64 and 1.9 eV. The transition at 1.64 eV is in good agreement with the reported optical absorption edge. These results are related with the electronic energy band scheme of .
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