Abstract
Existence of a p-n junction in a depletion layer is expected to change band energy distribution. The structures of thin p-type GaN on n-type GaN were investigated for the working electrode of the photoelectrochemical reactions. When the p-type layer thickness was thinner than the depletion layer, lower flatband potential was observed. The photocurrent density and the H2 gas generation also increased when the n-type GaN working electrode with thin p-type layer was used.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
