Abstract

A new photoelectrochemical (PEC) etching technique has been developed which will enhance the processing capability of device structures in SiC. Using PEC etching, etch rates as high as 100 µm/min have been achieved, which are the highest reported thus far for any room temperature SiC etch. In addition, it is possible to implement electrochemical etch stops in SiC pn-junctions such that the n-type layer may be removed rapidly, while the p-type substrate underneath remains completely inert. PEC etching is also very easily controlled and results in high aspect ratio structures. This process is useful for the fabrication of electromechanical sensors, Mesa structures, and Bipolar and CMOS devices.KeywordsEtch RateHigh Etch RateEtch StopHigh Aspect Ratio StructureElectrolytic DissolutionThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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