Abstract
Antimony-doped tin oxide (ATO) Sb–SnO2 has been prepared by thermal evaporation technique on indium tin oxide (ITO) glass substrate. The prepared ATO thin film was characterized by X-ray diffraction technique (XRD), scanning electron microscope (SEM), energy-dispersive X-ray spectroscopy (EDAX), UV-vis’s spectrometer, Fourier transform infrared spectroscopy (FTIR) and photoluminescence studies (PLS) at room temperature, 250 and 500 ºC. Furthermore, the as-fabricated ATO/indium tin oxide device was subjected to electrical measurements, was determined at room temperature and 500 ºC without etching, chemical etching and photoetching processes. Post-treatment, such as annealing and etching, electrochemical photocurrent results showed that the maximum photoelectrochemical performance without etching at 500 ºC of the PEC cell.
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