Abstract
Tin-doped indium oxide (ITO) films, prepared by dc magnetron sputtering, were characterized by (photo)electrochemical measurements in aqueous H2SO4 solutions. Wavelength dependent photocurrent measurements were used to determine the optical band gap energy of these films. Electron excitation from the valence band to localized states in the band gap was observed. The presence of such energy levels resulted in an Urbach tail. Impedance measurements were used to determine the flatband potential and the charge carrier concentration of ITO. A change in the charge carrier concentration due to different deposition conditions resulted in a change of the resistivity and in a shift of the flatband potential. This shift could be explained by a Moss–Burstein shift of the optical band gap.
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