Abstract
Bi 2Se 3 thin films have been deposited by simple and less investigated successive ionic layer adsorption and reaction (SILAR) technique onto fluorine-doped tin oxide (FTO) coated glass substrates at room temperature (27 °C). The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies indicate that Bi 2Se 3 thin films are nanocrystalline. These films are used for photoelectrochemical (PEC) characterization in cell with configuration as n-Bi 2Se 3/0.1 M polysulfide/C. The studies such as current–voltage characteristics in dark and light, photovoltaic power output, transient photoresponse, and capacitance–voltage have been carried out. The study reveals that fill factor and power conversion efficiency of the cell are low (0.43 and 0.032%, respectively).The flat bond potential is found to be −0.04 V (SCE).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
