Abstract
Abstract ZnS is an n-type semiconductor with a wide direct band gap (3.7 eV at room temperature), and it is very suitable as a window layer in heterojunction photovoltaic solar cells. We deposited ZnS thin films on Sn-doped In 2 O 3 -coated glass substrate using pulsed electrochemical deposition (ECD) from aqueous solutions containing Na 2 S 2 O 3 and ZnSO 4 with two different compositions, the first group grown from ZnSO 4 -rich solution, and the second grown from Na 2 S 2 O 3 -rich solution. We investigated electrical properties of the ZnS thin films and properties of contacts with different metals evaporated on the surfaces. We found that Au and In contacts have Ohmic-like characteristics to ZnS. Furthermore, we observed photoconductivity of the ZnS thin films by means of photoelectrochemical (PEC) measurements. We found that for both the groups of ZnS thin films, the as-deposited film shows weak photosensitivity and after annealing at 300 °C the photosensitivity improved.
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