Abstract
The photo-electrical properties of trilayer MoSe2 nanoflakes, fabricated by mechanical exfoliation, were systematically studied in this paper. The trilayer MoSe2 nanoflakes are n-type and possess a high gate modulation (On/Off ratio is larger than 10[Formula: see text] and a relatively high carrier mobility (1.79[Formula: see text]cm[Formula: see text]. The field effect transistor (FET) device of MoSe2 shows sensitive photo response, high photoresponsivity ([Formula: see text][Formula: see text]mA/W), quick response time ([Formula: see text][Formula: see text]ms), high external quantum efficiency ([Formula: see text] and high detection rate ([Formula: see text] for red and near-infrared wavelength. These results showed that the device based on few-layer MoSe2 nanoflakes exhibited good photo-electrical properties, which might open a new way to develop few-layer MoSe2-based material in the application of FETs and optoelectronics.
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