Abstract
We report on results of an experimental study of photoresponse, induced by pulsed CO2 laser in GaAs/AlGaAs p-n heterojunction and compare with that of GaAs homojunction. We show that the signal originates from free carrier heating in the structure. The dependence of the photocurrent on light intensity was established to be linear in the measured intensity range. Moreover, we demonstrate the possibility to employ this phenomenon in devices such as infrared detector and infrared photocapacitor as well, which successful operation does not require any cryogenic cooling.
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