Abstract
Photoelectrical properties of AlxGa1–xN epitaxial layers grown by Hydride Vapor Phase Epitaxy (HVPE) have been studied. The layers were grown on 6H-SiC and sapphire (Al2O3) substrates. Composition of AlxGa1–xN layers ranged from 0 mol.% up to 45 mol.% of AlN. The dependence of the energy band gap on the Al content has been studied. According to capacitance–voltage (CV) measurements, the concentration of uncompensated donors increased with the AlN mole fraction. The spectral response of the semitransparent Schottky barriers formed by evaporation of Ni on a Al0.06Ga0.94N HVPE layer demonstrated sharp cut-off with the peak value of 210 mA/W and UV/visible contrast about 104.
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