Abstract
Voltage, frequency, and temperature dependences of photo-emf are experimentally studied in the MIS HgCdTe/SiO 2 /Si 3 N 4 and HgCdTe/AOF structures. The MIS structures were produced on the basis of graded-bandgap Hg 1−x Cd x Te films grown by molecular-beam epitaxy on GaAs substrates. It is found that the subsurface graded-band-gap layers do affect the photoelectrical characteristics of MIS structures. The mechanisms limiting the differential resistance in the space-charge region at various temperatures are revealed.
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