Abstract
The influence of thermal annealing and exposure in oxygen plasma on photoelectrical characteristics of Ga2O3-GaAs structures in visible and UV-region is investigated. Thermal annealing enhances the transparence of Ga2O3 films in visible range and leads to the appearance of photocurrent in Ga2O3-GaAs-structures. Ga2O3 films absorb UV- radiation beginning with 240 nm and lower.
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