Abstract
Photoconductivity (PC) studies were carried out on GaS single crystals prepared from melt by directional solidification. We studied the effect of light intensity, applied voltage on both the PC and the lifetime of carriers. The V–I characteristics and the absorption spectra were checked for different sample thickness. The present investigation was extended to study the spectral distribution of the photocurrent for GaS. It was found that the photocurrent curves are practically independent of the bias voltage. The energy gap for GaS was found to be 2.5eV.
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