Abstract
This work presents the results of a study of the photoelectric properties of single crystals of the TlGa[Formula: see text]In[Formula: see text]Se2 system of solid solutions based on TlInSe2 with high photo and tensile sensitivity and switching properties with memory and TlGaSe2 with high photosensitivity in the visible and infrared regions of the spectrum. Single crystals of the above alloys were grown by the Bridgman–Stockbarger methods. Investigated alloys correspond in [Formula: see text], 0.1, 0.2, 0.3, 0.4, 0.7, 0.8, 0.9, 1 compounds. It was revealed that these alloys are photosensitive materials, and with a decrease in [Formula: see text] from 1 to 0, a shift of the spectral characteristic maxima from 0.57[Formula: see text][Formula: see text]m to 1.35[Formula: see text][Formula: see text]m is observed. The specific resistance at 77–300 K and the bandgap of the investigated phases have been determined. It was found that with an increase in the content of Ga in the composition of solid solutions, the bandgap increases from 1.23 eV to 2.15 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
