Photoelectric properties of TlGaxIn1−xSe2 (x = 0 − 1) single crystals

Abstract

This work presents the results of a study of the photoelectric properties of single crystals of the TlGa[Formula: see text]In[Formula: see text]Se2 system of solid solutions based on TlInSe2 with high photo and tensile sensitivity and switching properties with memory and TlGaSe2 with high photosensitivity in the visible and infrared regions of the spectrum. Single crystals of the above alloys were grown by the Bridgman–Stockbarger methods. Investigated alloys correspond in [Formula: see text], 0.1, 0.2, 0.3, 0.4, 0.7, 0.8, 0.9, 1 compounds. It was revealed that these alloys are photosensitive materials, and with a decrease in [Formula: see text] from 1 to 0, a shift of the spectral characteristic maxima from 0.57[Formula: see text][Formula: see text]m to 1.35[Formula: see text][Formula: see text]m is observed. The specific resistance at 77–300 K and the bandgap of the investigated phases have been determined. It was found that with an increase in the content of Ga in the composition of solid solutions, the bandgap increases from 1.23 eV to 2.15 eV.