Abstract
Photoelectric properties of the n-SnSSe-p-InSe heterojunctions were investigated. A special feature of these structures is the use of an SnS2−x Sex alloy (x=0.5) as a wide-bandgap window material, which makes it possible to shift a short-wavelength threshold (lying in the 0.8–1.0 μm range) of the heterojunction photosensitivity band. It is demonstrated that high-quality p-n heterojunctions can be fabricated from layered crystals joined to make an optical contact.
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