Abstract
Pb1−x−ySnxGeyTe:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range λ<20μm. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10−2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×1013 cm Hz1/2 W−1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 1012 cm−2 s−1 to 1018 cm−2 s−1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.
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