Abstract
Resistivity as low as ∼0.1 Ωcm has been obtained in ZnSe which has been evaporated onto p-Si and p+ -GaAs. Infrared quenching of the photocapacitance technique has been applied on these samples to obtain the deep level information. The spectrum of the photoionization cross section for holes from Ag(Zn) level to the valence band was obtained and the peak value was 4.2×10-16 cm2 in n-ZnSe/p+GaAs. The deep Ag(Zn) level is located at 0.59 eV from the top of the valence band at 300 K. Two levels of 0.6 and 0.9 eV from the top of the valence band are obtained in the undoped n-ZnSe/p-Si at 300 K. The dominant current transport mechanism is tunneling-recombination via interface states. The doping profile of the Ag(Zn) level was also obtained from the modified C-V method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
