Abstract
The optical properties of silicon rich oxide (SRO) have been deeply studied because, between other reasons, they emit an intense photoluminescence (PL) from visible to the near infrared range when excited with UV light. MOS-like structures with SRO film as the active layer have shown an enhanced conductivity under different illumination conditions. In this paper, MOS-like structures with double SRO layer were fabricated in order to have a barrier to isolate the silicon substrate from the active SRO layer. Results show that all structures have a higher current when light shines on them than that obtained under dark conditions. A possible application of this photo-effect can be used to increase the response of photodetectors and silicon solar cells.
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