Year-end Sale % OFF 
Abstract
Photosensitive rectifying heterostructures were prepared based on single crystals of p-CdSiAs2 doped with group-III impurities by depositing In2O3 layers. It was established that the slope of the long-wave edge of the photosensitivity of the obtained structures decreases as the CdSiAs2 hole concentration increases. Based on polarization investigations of the photocurrent, a conclusion is drawn concerning the possibilities for practical application of diode structures in polarization photoelectronics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
