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Abstract
Based on single crystals of AgGaSe2, AgGaTe2, CuGaTe2 of the p-type, surface-barrier structures were manufactured by vacuum thermal deposition on illumination of which the photovoltaic effect was observed. It is established that the longwave edge of the photosensitivity of such structures possesses several inflections attributable to photoactive absorption involving paracipation of levels of lattice defects. It is shown that In/p-(Cu, Ag)Ga(Se, Te)2 surface-barrier structures can be used as wide-band transducers and photoanalyzers of linearily polarized radiation.
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