Abstract
The electrical and photoelectric properties of Hg0.1Cd0.9Te crystals grown by chemical vapor transport are investigated experimentally. The temperature dependences of the carrier concentration and mobility are determined. The photoelectric properties of these crystals fit a model based on the existence of fast and slow recombination centers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
