Abstract
Components of complex dielectric permittivity of semi-insulating Cd 1−x Zn x Te crystals had been measured in the dark and under photo excitation. Also we studied energy resolution of radiation detectors made from these crystals for 137Cs quants. Present studies have been carried out taking into account using specimens from different regions of crystal ingot. It is ascertained that investigated values of dielectric permittivity correlate with energy resolution of detectors. Such correlation is explained with presence of electrically active defects generated during the growth in the crystal volume. It is suggested that excitation with white light influence on dielectric permittivity due to fast recombination centers
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