Abstract
We report on a memory effect observed in an inverted bulk heterojunction organic photovoltaic device, where the electron-collecting electrode is ZnO nanowires grown on an indium tin oxide (ITO) substrate. The device presented a unique response to light by switching from a rectifying behavior in the dark to a resistive response under illumination. After cessation of light, the device slowly stabilized back to its rectifying nature after ∼270 min, introducing a volatile photoelectric memory effect. The reversibility of the response is verified through multiple cycles of light exposure and placing the device in the dark. The device is also illuminated with different light intensities to study the photovoltaic response through I–V characterization. It is found that the time constant associated with the transition between the rectifying and resistive characteristics is independent from the light intensity. Further study revealed that there is a hysteresis loop in the I–V curve in the dark, but the loop vanished in the resistive mode under illumination. A mechanism based on oxygen absorption–desorption has been suggested to explain the observed effect. Such a memory effect can be used in various optoelectronic devices to save the optical information for an extended time.
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