Abstract
Photoelectric emission has been obtained both from evaporated films and from single crystals of CsI. For hν < 6 eV, the yield is relatively low and varies widely from sample to sample. It is ascribed here to direct ionization and to exciton-induced emission from uncontrolled impurities and imperfections. For hν > 6 eV, the yield rises abruptly to much higher values in a reproducible way for all samples. This effect is attributed to emission from the upper edge of the valence band lying about 6 eV below the vacuum level. Energy distributions of the photoelectrons are consistent with these views. Concurrent optical absorption measurements show detail consistent with band-to-band transitions if the electron affinity of CsI is judged to be less than 0.3 eV.
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