Abstract
AbstractLow‐dimensional nanomaterials have attracted attention due to their excellent electrical and optical properties. The development of nonvolatile memory device based on low‐dimensional nanomaterials is important for establishing high‐performance computers. In this work, black phosphorus quantum dots (BPQDs) are physically blended with the fullerene derivative [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM), and then polyvinylpyrrolidone (PVP) is added to enhance the film‐forming properties of the material. The resulting composite thin film is sandwiched between aluminum and indium‐tin oxide (ITO) electrodes to form an Al/BPQDs/PCBM/PVP/ITO device. The device exhibits stable nonvolatile rewritable memory behavior, with on and off threshold voltages of −2.4 and +3.25 V, respectively, and an on/off ratio exceeding 103. In addition, the device exhibits a lower threshold voltage and higher conductivity upon increasing the light intensity under laser irradiation at 450 nm. Light‐induced electron paramagnetic resonance and fluorescence spectroscopy show that the existence of electric field‐induced charge transfer and light‐induced charge transfer in the composite thin film are responsible for the device's photoelectric dual‐response resistive characteristics.
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