Abstract
The photoelectric work function φ and the emission constant M of clean ruthenium films evaporated on pyrex substrates at 78 °K and on non-cooled, highly outgassed quartz substrates were determined after sintering at various temperatures up to 1000°K. For films deposited on pyrex substrates and subsequently sintered φ rises from 4.52 ± 0.03 eV at 78°K to 5.02 ± 0.03 eV at 573°K. For films evaporated on quartz and annealed above 700°K, φ is 5.10 ± 0.05 eV. The emission constant M continues to decrease even beyond the temperature where φ ceases to increase. On the basis of their position in Group VIII the work function of Rh and Os films deposited at 78°K and sintered at 373°K are predicted to be 5.1–5.2 eV and 4.9–5.0 eV respectively.
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