Abstract
Abstract Controlling collective electronic states holds great promise for the development of innovative devices. Here, we experimentally detect the modification of the charge density wave (CDW) phase transition within a 1T-TaS2 layer in a WS2/1T-TaS2 heterostructure using time-resolved ultrafast spectroscopy. Laser-induced charge transfer doping strongly suppresses the commensurate CDW (CCDW) phase, which results in a significant decrease in both the phase transition temperature (T c) and phase transition stiffness (PTS). We interpret that photo-induced hole doping, when surpassing a critical threshold value of ~1018/cm3, sharply decreases the phase transition energy barrier. Our results provide new insights into controlling the CDW phase transition, paving the way for optical-controlled novel devices based on CDW materials.
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