Abstract
High-speed high-power photodiodes are key components in microwave photonic applications including antenna remoting, generation of microwave signals, and analog optical links. With the rapid emergence of Si photonics, it is becoming increasing important to develop approaches to incorporate these photodiodes into a Si platform. For integration of III-V photodiodes on silicon, various integration approaches have been reported, including adhesive wafer bonding, direct molecular wafer bonding, and direct III-V material growth on Si. This paper will report the integration of InGaAs/InGaAsP/InP modified uni-traveling carrier photodiodes using each of these techniques. In addition, high-power Ge on Si photodiodes will be discussed.
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