Abstract
Al doped tin oxide (Al:SnO2)11Diodes. are fabricated onto silicon substrate by easy spray pyrolysis route. The room temperature current-voltage (I–V) measurements of Ag/Al:SnO2/n-Si/Au junction are taken under dark and various illumination level. The reverse and forward current increase with the increasing of illumination intensity, gradually. The device exhibits good photodiode properties but a photovoltaic behavior is not observed. Ideality factor values is found to be 7.54 and 5.41 two distinct linear region of the I–V curve of the junction under dark. Its value varies between 4.87 and 5.80 under light. The zero-bias barrier height decreases with increasing illumination level. The value of series resistance obtained from generalized Norde plot have showed a strong dependence on illumination level. Its value is calculated as 1.83 kΩ and 0.91 kΩ under dark and illumination level of 190 mW/cm2, respectively. The space limited current (SCLC) conduction mechanism is investigated under dark and light conditions. The frequency dependence of capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of the junction are analyzed in a wide range of applied voltage (from -8 V to + 8 V). The thickness of Al:SnO2 thin film is obtained as 360 nm by using C and G data at 1 MHz and 8 V.
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