Abstract
With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific detectivity, stability, and repeatability, and this work will help expand the application of molecular semiconductor materials for photodetection.
Highlights
In recent years, with the wide application of photodetectors in medical, sensing, and communication industries [1,2,3,4,5,6], various types of photodetectors are emerging
Ibrahima Ka et al reported the use of a pulsed laser deposition (PLD) technique to decorate double-walled carbon nanotubes (DWCNTs) with PbS quantum dots (QDs) to form a new class of physically synthesized nanohybrid (NH) materials
HDA-BiI5 has a narrow bandgap with a wide range of light absorption, so we investigated the performance of the devices by varying the incident light at different wavelengths and powers under single light source
Summary
With the wide application of photodetectors in medical, sensing, and communication industries [1,2,3,4,5,6], various types of photodetectors are emerging. A new molecular semiconductor material hexane-1, 6-diammonium pentaiodobismuth (HDA-BiI5 ), with the narrowest bandgap (~1.89 eV) [16] and a wide range of light absorption, has a bright prospect for future applications in photoelectric detection [17,18,19]. We prepare photodetectors with ITO/NiOx /HDA-BiI5 /Al structure without electron transport layer on ITO substrate using HDA-BiI5 molecular semiconductor material as the light-absorbing layer and test the photoelectric performance of the devices using a single light source. It was found that this device has good photoresponsivity and specific detectivity, which provides a basis for the future use of molecular semiconductor materials as a light-absorbing layer in the study of photodetection of different structures, further expanding the application of molecular semiconductor materials
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