Photodetector waveguide structures made of epitaxial InGaAs films and intended for integrated circuits manufactured from III-V semiconductor compounds

Abstract

Photodetector waveguide structures made of epitaxial InxGa1 – xAs solid-solution films were developed and investigated. These structures were intended for optical integrated circuits manufactured from III-V semiconductor compounds for operation in the wavelength range 1.0–1.5 μm. Two types of photodetector waveguide p-i-n structures were developed. They consisted of a composite waveguide and tunnel-coupled waveguides, respectively. A study was made of structural parameters, responsivity, spectral and time characteristics, and dark currents in photodetectors made of the waveguide structures. This investigation was carried out in the wavelength range 1.0–1.3 μm. The maximum spectral responsivity of one of the types of the waveguide photodetector was ~ 0.5 ± 0.1 A/W and the dark current did not exceed 10 − 7–10 − 8 A.