Abstract
We present the principle of a new photodetector based on the synchronous drift in a semiconductor of photogenerated carriers with a moving interference pattern. It provides a large detection volume which could be suitable for the optical generation of microwave signals. A theoretical analysis is detailed and followed by an experimental demonstration in a MBE grown GaAs layer illuminated with a moving interference pattern. We study the evolution of the detected signal at frequency f=1.6 GHz as a function of applied electric field, carrier lifetime, and fringe period.
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