Photodetection Characterization of SiPM Technologies for their Application in Scintillator based Neutron Detectors

Abstract

Small-angle neutron scattering (SANS) experiments have become one of the most important techniques in the investigation of the properties of material on the atomic scale. Until 2001, nearly exclusively 3He-based detectors were used for neutron detection in these experiments, but due to the scarcity of 3He and its steeply rising price, researchers started to look for suitable alternatives. Scintillation based solid state detectors appeared as a prominent alternative. Silicon photomultipliers (SiPM), having single photon resolution, lower bias voltages compared to photomultiplier tubes (PMT), insensitivity to magnetic fields, low cost, possibility of modular design and higher readout rates, have the potential of becoming a photon detector of choice in scintillator based neutron detectors. The major concerns for utilizing the SiPM technology in this kind of applications are the increase in their noise performance and the decrease in their photon detection efficiency (PDE) due to direct exposure to neutrons. Here, a detailed comparative analysis of the PDE performance in the range between UV and NIR parts of the spectra for three different SiPM technologies, before and after irradiation with cold neutrons, has been carried out. For this investigation, one digital and two analog SiPM arrays were irradiated with 5Å wavelength cold neutrons and up to a dose of 6×1012 n/cm2 at the KWS-1 instrument of the Heinz Maier-Leibnitz Zentrum (MLZ) in Garching, Germany.