Abstract
We investigate the photodetachment of H - near an inelastic interface semiclassically. It is found that the inelasticity of an interface has significant influence on the photodetachment process. We have derived an analytical formula of the cross section of photodetachment. The spectrum of photodetachment consists of a smooth background and a sinusoidal oscillation whose frequency depends on the electronic energy, the reflection of the wall and the distance between the ion and the wall.
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